A new self-reference sensing scheme for TLC MRAM


Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations.