|Title||Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration|
|Publication Type||Conference Paper|
|Year of Publication||2009|
|Authors||H Li, H Xi, Y Chen, J Stricklin, X Wang, and T Zhang|
|Conference Name||Proceedings of the 2009 Ieee Computer Society Annual Symposium on Vlsi, Isvlsi 2009|
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistancearea product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STTRAM are also conducted. © 2009 IEEE.