|Title||A synapse memristor model with forgetting effect|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||L Chen, C Li, T Huang, Y Chen, S Wen, and J Qi|
|Journal||Physics Letters A|
|Pagination||3260 - 3265|
In this Letter we improved the ion diffusion term proposed in literature  and redesigned the previous model as a dynamical model with two more internal state variables 'forgetting rate' and 'retention' besides the original variable 'conductance'. The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor. And different from the previous model, the transition from short term memory to long term memory is also defined by the new model. Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one. © 2013 Elsevier B.V. All rights reserved.
|Short Title||Physics Letters A|