Abstract
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of nanoscale memristors. Utilizing its unique device behavior, the paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security. © 2010 EDAA.
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