| Title | A new self-reference sensing scheme for TLC MRAM |
| Publication Type | Conference Paper |
| Year of Publication | 2015 |
| Authors | Z Li, B Yan, L Yang, W Zhao, Y Chen, and H Li |
| Conference Name | Proceedings Ieee International Symposium on Circuits and Systems |
| Date Published | 07/2015 |
| Abstract | Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations. |
| DOI | 10.1109/ISCAS.2015.7168703 |
