| Title | A 1.0V 45nm nonvolatile magnetic latch design and its robustness analysis |
| Publication Type | Conference Paper |
| Year of Publication | 2011 |
| Authors | P Wang, X Chen, Y Chen, H Li, S Kang, X Zhu, and W Wu |
| Conference Name | Proceedings of the Custom Integrated Circuits Conference |
| Date Published | 11/2011 |
| Abstract | A new nonvolatile latch design is proposed based on the magnetic tunneling junction (MTJ) devices. In the standby mode, the latched data can be retained in the MTJs without consuming any power. Two types of operation errors, namely, persistent and non-persistent errors, are quantitatively analyzed by including the process variations and thermal fluctuations during the read and write operations. A design at 45nm technology node is used as the example to discuss the design tradeoffs. © 2011 IEEE. |
| DOI | 10.1109/CICC.2011.6055392 |
