|Title||Spintronic memristor through spin-thorque-induced magnetization motion|
|Publication Type||Journal Article|
|Year of Publication||2009|
|Authors||X Wang, Y Chen, H Xi, H Li, and D Dimitrov|
|Journal||Ieee Electron Device Letters|
|Pagination||294 - 297|
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage based on interactions of electron and spin transport. © 2009 IEEE.
|Short Title||Ieee Electron Device Letters|