Title | Spin transfer torque memory with thermal assist mechanism: A case study |
Publication Type | Journal Article |
Year of Publication | 2010 |
Authors | H Xi, J Stricklin, H Li, Y Chen, X Wang, Y Zheng, Z Gao, and MX Tang |
Journal | Ieee Transactions on Magnetics |
Volume | 46 |
Issue | 3 PART 2 |
Start Page | 860 |
Pagination | 860 - 865 |
Date Published | 03/2010 |
Abstract | We have investigated spin transfer torque random access memory (STT-RAM) with a thermal-assist programming scheme using finite-element thermal simulation. We conducted the study on a specific memory element design to analyze the thermal dynamics and thermal programming mechanism.We paid particular attention to the scalability and design potential of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. In addition we systematically analyzed and compared thermal-assisted STT-RAM and standard STT-RAM based on these results. Finally, we provide a summary of the programming scheme and some recommendations for improving writeability and scalability of this technology. © 2010 IEEE. |
DOI | 10.1109/TMAG.2009.2033674 |
Short Title | Ieee Transactions on Magnetics |