|Title||Scalability of PCMO-based resistive switch device in DSM technologies|
|Publication Type||Conference Paper|
|Year of Publication||2010|
|Authors||Y Chen, W Tian, H Li, X Wang, and W Zhu|
|Conference Name||Proceedings of the 11th International Symposium on Quality Electronic Design, Isqed 2010|
This work systematically explores the relationship between the resistive switching properties of Pr0.7Ca0.3MnO3 (PCMO) thin film element and its geometry dimensions in deep submicron (DSM) technologies. A series of PCMO-based resistive switch devices (RSDs) with different geometry sizes were fabricated. Our E-test results show that by reducing the PCMO layer thickness from the normal value of about 200nm to 30nm, a low switching voltage (within ±2.5V) can be achieved. The reduction of PCMO layer thickness does not incur visible impact on device reliability: no significant degradation of two resistance states was observed after 1500 programming cycles. Based on the extrapolation from the measured electrical parameters of PCMO-based devices, we analyzed the design requirements of PCMO-based resistive memory with different cell structures in sub-100nm technologies. Our simulations show that one-transistor-one-RSD (1T1R) cell structure can be successfully scaled down to 22nm technology node. However, the scaling of one-non-ohmicdevice-one-RSD (1N1R) cell structure is significantly limited by the low driving ability of current non-ohmic device technology. ©2010 IEEE.