Recent Technology Advances of Emerging Memories

TitleRecent Technology Advances of Emerging Memories
Publication TypeJournal Article
Year of Publication2017
AuthorsY Chen, HH Li, I Bayram, and E Eken
JournalIeee Design & Test
Volume34
Start Page8
Issue3
Pagination8 - 22
Date Published06/2017
Abstract

Phase change memory, spin-transfer torque random access memory, and resistive random access memory are three major emerging memory technologies that receive tremendous attentions from both academia and industry. In this survey article, the authors summarize the latest research progress of these technologies in device engineering, circuit design, computer architecture, and application. - Tei-Wei Kuo, National Taiwan University

DOI10.1109/MDAT.2017.2685381
Short TitleIeee Design & Test