PCMO device with high switching stability

TitlePCMO device with high switching stability
Publication TypeJournal Article
Year of Publication2010
AuthorsY Chen, W Tian, H Li, X Wang, and W Zhu
JournalIeee Electron Device Letters
Start Page866
Pagination866 - 868
Date Published08/2010

We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3 (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5×103 programming cycles. © 2010 IEEE.

Short TitleIeee Electron Device Letters