| Title | PCMO device with high switching stability |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | Y Chen, W Tian, H Li, X Wang, and W Zhu |
| Journal | Ieee Electron Device Letters |
| Volume | 31 |
| Start Page | 866 |
| Issue | 8 |
| Pagination | 866 - 868 |
| Date Published | 08/2010 |
| Abstract | We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3 (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5×103 programming cycles. © 2010 IEEE. |
| DOI | 10.1109/LED.2010.2050457 |
| Short Title | Ieee Electron Device Letters |
