Low voltage two-state-variable memristor model of vacancy-drift resistive switches

TitleLow voltage two-state-variable memristor model of vacancy-drift resistive switches
Publication TypeJournal Article
Year of Publication2015
AuthorsL Zhang, N Ge, Joshua J Yang, Z Li, Stanley R Williams, and Y Chen
JournalApplied Physics A: Materials Science and Processing
Volume119
Start Page1
Issue1
Pagination1 - 9
Date Published04/2015
Abstract

We illustrate a heuristic two-state-variable memristor model of charged O vacancy-drift resistive switches that include the effects of internal Joule heating on both the electronic transport and the drift velocity (i.e., switching speed) of vacancies in the switching material. The dynamical state variables correspond to the cross-sectional area of a conducting channel in the device and the gap between the end of the channel and one of the electrodes. The model was calibrated against low voltage pulse-sweep and state-test data collected from a TaOx memristor so that the contributions of the channel gap, area and temperature to switching can be analyzed. The model agrees well with experimental results for long switching times and low-to-intermediate voltage operation.

DOI10.1007/s00339-015-9033-3
Short TitleApplied Physics A: Materials Science and Processing