Title | Emerging non-volatile memory technologies: From materials, to device, circuit, and architecture |
Publication Type | Conference Paper |
Year of Publication | 2010 |
Authors | H Li, and Y Chen |
Conference Name | 2007 50th Midwest Symposium on Circuits and Systems |
Date Published | 09/2010 |
Abstract | The emerging nonvolatile memory technologies are gaining significant attentions from semiconductor in recent years. Multiple promising candidates, such as phase change memory, magnetic memory, resistive memory, and memristor, have gained substantial attentions and are being actively pursued by industry. In this paper, we will give a 360 degree introduction on emerging non-volatile memory technologies by using spin-transfer torque random access memory (STT-RAM) as an example. The discussion includes process technology, device modeling, design considerations, and architecture in future computing systems. © 2010 IEEE. |
DOI | 10.1109/MWSCAS.2010.5548590 |