Emerging non-volatile memory technologies: From materials, to device, circuit, and architecture

TitleEmerging non-volatile memory technologies: From materials, to device, circuit, and architecture
Publication TypeConference Paper
Year of Publication2010
AuthorsH Li, and Y Chen
Conference Name2007 50th Midwest Symposium on Circuits and Systems
Date Published09/2010
Abstract

The emerging nonvolatile memory technologies are gaining significant attentions from semiconductor in recent years. Multiple promising candidates, such as phase change memory, magnetic memory, resistive memory, and memristor, have gained substantial attentions and are being actively pursued by industry. In this paper, we will give a 360 degree introduction on emerging non-volatile memory technologies by using spin-transfer torque random access memory (STT-RAM) as an example. The discussion includes process technology, device modeling, design considerations, and architecture in future computing systems. © 2010 IEEE.

DOI10.1109/MWSCAS.2010.5548590