|Title||Built-in selectors self-assembled into memristors|
|Publication Type||Conference Paper|
|Year of Publication||2016|
|Authors||S Chakraborty, S Joshi, Q Xia, H Li, Y Chen, H Jiang, Q Wu, M Barnell, and JJ Yang|
|Conference Name||Proceedings Ieee International Symposium on Circuits and Systems|
We demonstrate an approach to build a selector into ReRAM (memristors) using engineered materials. In this approach, a segment(s) of nonlinear material is self-assembled into the conduction channel (s) (filament) of a memristor. The nonlinear material exhibits a highly nonlinear current-voltage characteristic, which gives rise to a nonlinear i-v characteristic of the memristor in the ON state.