Built-in selectors self-assembled into memristors

TitleBuilt-in selectors self-assembled into memristors
Publication TypeConference Paper
Year of Publication2016
AuthorsS Chakraborty, S Joshi, Q Xia, H Li, Y Chen, H Jiang, Q Wu, M Barnell, and JJ Yang
Conference NameProceedings Ieee International Symposium on Circuits and Systems
Date Published07/2016
Abstract

We demonstrate an approach to build a selector into ReRAM (memristors) using engineered materials. In this approach, a segment(s) of nonlinear material is self-assembled into the conduction channel (s) (filament) of a memristor. The nonlinear material exhibits a highly nonlinear current-voltage characteristic, which gives rise to a nonlinear i-v characteristic of the memristor in the ON state.

DOI10.1109/ISCAS.2016.7527200