|Title||Beyond CMOS: Memristor and its application for next generation storage and computing|
|Publication Type||Conference Paper|
|Year of Publication||2018|
|Authors||C Liu, F Liu, and H Li|
|Conference Name||Ecs Transactions|
To break Moore's Law, "Beyond CMOS" post-silicon technologies have gained great attention in recent years, especially, facing the immensely expensive storage and computation in terms of speed and energy in the current big data environment. Novel devices, circuits and computing architectures based on them have appeared to improve the storage and computing efficiency, such as spin device, phase change device, and memristor. Among them, the memristor is considered as one of the most promising candidates for the next generation storage and computing due to its high speed, scalability, low energy, and good comparability with CMOS technology. Research of employing the memristor-based cross-point array in nonvolatile memory, which is called resistive random-access memory (ReRAM) has gained great success as an alternative technology of flash memory. Besides that, the memristor also got enormous attention in novel computing architecture, such as in-memory computing and the brain-inspired computing. In this paper, we summarize our work in memory and neuromorphic computing system designs by leveraging the memristor device.