| Title | Applications of TMR devices in solid state circuits and systems |
| Publication Type | Conference Paper |
| Year of Publication | 2010 |
| Authors | Y Chen, H Li, X Wang, and J Park |
| Conference Name | 2010 International Soc Design Conference, Isocc 2010 |
| Date Published | 12/2010 |
| Abstract | Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology. ©2010 IEEE. |
| DOI | 10.1109/SOCDC.2010.5682923 |
