|Title||Applications of TMR devices in solid state circuits and systems|
|Publication Type||Conference Paper|
|Year of Publication||2010|
|Authors||Y Chen, H Li, X Wang, and J Park|
|Conference Name||2010 International Soc Design Conference, Isocc 2010|
Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology. ©2010 IEEE.